Word line interference based data recovery technique for 3D NAND Flash

3D NAND Flash Based on Planar Cells

In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all-around (GAA) cell devices—against architectures that are based on planar cell devices. The differences and similarities between the two classes of a...

The efficient recovery of deleted data from NAND flash memory

A Survey of 3D Nand Flash Memory

Nand flash memory is an important part of the electronics products. Over the years scientists and engineers have worked hard to make it faster and cost effective. Recently, there has been a realization that current technologies is not capable of further increasing their capacity and at the same time keep the cost down. Keeping in view this limit and the ever increasing need for Nand flash memor...

Reliability of 3D NAND Flash Memories

Reliability represents one of the major antagonist towards the unstoppable technological evolution of hyperscaled NAND memories, since the correct operations must be assured throughout the entire lifetime. In particular, the ability of keeping unaltered the stored information even after a consistent number of write operations and for long times must be guaranteed. A growth of the memory devices...

Architectural and Integration Options for 3D NAND Flash Memories

Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in consumer and enterprise scenarios. To keep the evolutionary pace of the technology, NAND Flash must scale aggressively in terms of bit cost. Whe...